Tokyo Electron Limited (OTCMKTS:TOELY) Short Interest Up 94.1% in January

Tokyo Electron Limited (OTCMKTS:TOELYGet Free Report) was the recipient of a significant growth in short interest in January. As of January 15th, there was short interest totalling 92,200 shares, a growth of 94.1% from the December 31st total of 47,500 shares. Based on an average daily volume of 254,700 shares, the days-to-cover ratio is currently 0.4 days.

Tokyo Electron Price Performance

Shares of Tokyo Electron stock traded up $3.85 during trading on Thursday, reaching $83.02. 131,643 shares of the stock traded hands, compared to its average volume of 176,233. Tokyo Electron has a 52-week low of $68.83 and a 52-week high of $134.91. The business has a fifty day simple moving average of $79.64 and a two-hundred day simple moving average of $83.61. The company has a market capitalization of $76.49 billion, a price-to-earnings ratio of 30.98 and a beta of 1.51.

Tokyo Electron (OTCMKTS:TOELYGet Free Report) last released its quarterly earnings results on Tuesday, November 12th. The company reported $0.86 earnings per share for the quarter. The business had revenue of $3.81 billion during the quarter, compared to analysts’ expectations of $3.70 billion. Tokyo Electron had a return on equity of 24.79% and a net margin of 21.32%. On average, research analysts predict that Tokyo Electron will post 3.23 earnings per share for the current fiscal year.

Analyst Ratings Changes

Separately, Sanford C. Bernstein raised shares of Tokyo Electron to a “strong-buy” rating in a research note on Monday, October 7th.

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Tokyo Electron Company Profile

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Tokyo Electron Limited, together with its subsidiaries, develops, manufactures, and sells semiconductor and flat panel display (FPD) production equipment in Japan, Europe, North America, Taiwan, China, South Korea, Southeast Asia, and internationally. The company offers coaters/developers, etch systems, surface preparation systems, deposition systems, test systems, wafer bonders/debonders, wafer edge trimming, SiC epitaxial CVD systems, gas cluster ion beam system, and cleaning systems.

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